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Brand Name : JUYI
Model Number : JY4N8M
MOQ : 1 set
Packaging Details : PE bag+ carton
Place of Origin : China
Price : Negotiable
Delivery Time : 5-10 days
Payment Terms : T/T,L/C,Paypal
Supply Ability : 1000sets/day
Drain-Source Voltage : 40V
Gate-Source Voltage : ±20V
Pulsed Drain Current : 350A
Maximum Power Dissipation : 80W
reverse body recovery : Yes
JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY4N8M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on‐resistance with low gate charge. These features combine
to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
FEATURES
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
DOWNLOAD JY4N8M USER MANUAL
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High Side BLDC Motor Driver IC Chip Enhancement Mode For Power Switching Images |